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| 首頁 / 產品介紹 / 光電元件 / 高性能發光二極體(RCLED) |
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 高性能發光二極體(RCLED) |
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| 一般而言共振腔發光二極體是由兩上下布拉格反射鏡 (Distributed Bragg Reflector) 夾著一活性層共振腔 (Active Region Cavity) 所組成，當光子由量子井 (Quantum Well) 產生時便於共振腔內來回產生共振，最後光子便由具有較低反射率之反射鏡一方輸出，比起一般發光二極體，具有共振腔的發光二極體能將光集中在約 100 度的發散角內，光外部量子效率 (External Quantum Efficiency) 也高出三倍以上之多。 |
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Epi-wafer
| Product |
Item |
Model No. |
Description |
Material |
MOQ |
Download |
 |
650nm RCLED Wafer |
WARC0650PO121A3Z |
630nm~
670nm |
InGaAlP |
3"x3(PCS)
2"x2(PCS) |
 PDF |
| 850nm RCLED Wafer |
WZRC0850IR000C3Z |
835nm~
865nm |
AlGaAs/GaAs |
PDF |
| 870nm RCLED Wafer |
WARC0870IR111B3Z |
855nm~
885nm |
AlGaAs/GaAs |
PDF |
| Customer Design |
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OEM/ODM |
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Chip
| Product |
Item |
Model No. |
Description |
MOQ |
Download |
 |
650nm RCLED Chip |
CZRC0650PO121A3Z |
High Power |
10K |
PDF |
| 650nm RCLED Chip |
CZRC0650PO121B3Z |
High Speed |
PDF |
| 870nm RCLED Chip |
CZRC0870IR111A1Z |
High Speed |
PDF |
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Customer Design |
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OEM/ODM |
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面射型雷射